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IDT71T75602S200BGI123
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IDT71T75602S200BGI
  • Manufacturer No:
    IDT71T75602S200BGI
  • Manufacturer:
    Integrated Device Technology (IDT)
  • Category:
    Memory
  • Datasheet:
    IDT71T75602S200BGI
  • SKU:
    11066640
  • Description:
    BALL 3-STATE 2010 Parallel (Memory Format) Memory 85C 2.375V 18874368bit 14mm

IDT71T75602S200BGI Details

BALL 3-STATE 2010 Parallel (Memory Format) Memory 85C 2.375V 18874368bit 14mm

IDT71T75602S200BGI Specification Parameters

  • Number of Functions: 1
  • Surface Mount: YES
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Qualification Status: Not Qualified
  • JESD-609 Code: e0
  • Max Operating Temperature: 85°C
  • Power Supplies: 2.5V
  • Reach Compliance Code: not_compliant
  • Temperature Grade: INDUSTRIAL
  • Memory Width: 36
  • Terminal Form: BALL
  • Output Characteristics: 3-STATE
  • Terminal Finish: Tin/Lead (Sn63Pb37)
  • Operating Mode: SYNCHRONOUS
  • Supply Voltage-Min (Vsup): 2.375V
  • Subcategory: SRAMs
  • HTS Code: 8542.32.00.41
  • Height Seated (Max): 2.36mm
  • Pin Count: 119
  • Memory Type: RAM, SRAM
  • Access Time (Max): 3.2 ns
  • Organization: 512KX36
  • RoHS Status: Non-RoHS Compliant
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Moisture Sensitivity Level (MSL): 3
  • Min Operating Temperature: -40°C
  • Technology: CMOS
  • Supply Voltage: 2.5V
  • Published: 2010
  • Terminal Pitch: 1.27mm
  • Terminal Position: BOTTOM
  • Interface: Parallel
  • Width: 14mm
  • Frequency: 200MHz
  • Length: 22mm
  • I/O Type: COMMON
  • Supply Voltage-Max (Vsup): 2.625V
  • Package / Case: BGA
  • Additional Feature: PIPELINED ARCHITECTURE
  • ECCN Code: 3A991.B.2.A
  • Number of Terminations: 119
  • Standby Voltage-Min: 2.38V
  • Memory Density: 18874368 bit

Integrated Device Technology (IDT) — Manufacturer Introduction

Integrated Device Technology (IDT)
We are a world-wide leader in the designdevelopmentand marketing of silicon timing devices to the communications equipmentconsumerand business electronics industries.

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